indium CAS NO.7440-74-6

Product Introduction：

Mainly used for the preparation of III-V compound semiconductors, high-purity alloys, ultra-low temperature cooling, transistor bases, doping agents for germanium and silicon single crystals, indium sealing, ITO, nuclear radiation safety monitoring, electrical contact components, solder, etc.

Overview

99.99% indium ingots, indium beads, indium particles, indium powder

Technical docking: electrolysis melting (removing low melting point lead, arsenic, cadmium, phosphorus, mercury, sulfur, selenium, etc.)

Inspection: ICP-MS; GDMS.

Service: Provide practical protective measures and material application solutions.

Technical Parameter

1. Physical properties:

Atomic mass: 114.818

Electronegativity: 1.78

Density: 7.31 g/cm3 (20 ℃) (0-100 ℃)

Melting point: 156.5985 ℃

Boiling point: 2072 ℃

2. Specifications:

Chemical purity:

High purity indium: In-05 has a purity of over 99.999%, and the total impurity content of silver, aluminum, arsenic, cadmium, copper, iron, magnesium, nickel, lead, sulfur, silicon, tin, thallium, and zinc is less than 10ppm;

Ultra pure indium: In-06 with a purity of over 99.9999%, with a total impurity content of less than 1ppm in cadmium, copper, iron, magnesium, lead, sulfur, silicon, and tin;

Ultra high purity indium: In-07 has a purity of over 99.9999%, and the total impurity content of silver, cadmium, copper, iron, magnesium, nickel, lead, and zinc is less than 0.1ppm;

3. Physical properties: rod, ingot, tablet, pellet, pill.

4. Purpose:

Mainly used for the preparation of III-V compound semiconductors, high-purity alloys, ultra-low temperature cooling, transistor bases, doping agents for germanium and silicon single crystals, indium sealing, ITO, nuclear radiation safety monitoring, electrical contact components, solder, etc.

5. Packaging: Polyester film packaging followed by plastic film vacuum packaging or polyethylene bottle vacuum packaging.

Product Introduction：

Mainly used for the preparation of III-V compound semiconductors, high-purity alloys, ultra-low temperature cooling, transistor bases, doping agents for germanium and silicon single crystals, indium sealing, ITO, nuclear radiation safety monitoring, electrical contact components, solder, etc.

Overview

99.99% indium ingots, indium beads, indium particles, indium powder

Technical docking: electrolysis melting (removing low melting point lead, arsenic, cadmium, phosphorus, mercury, sulfur, selenium, etc.)

Inspection: ICP-MS; GDMS.

Service: Provide practical protective measures and material application solutions.

Technical Parameter

1. Physical properties:

Atomic mass: 114.818

Electronegativity: 1.78

Density: 7.31 g/cm3 (20 ℃) (0-100 ℃)

Melting point: 156.5985 ℃

Boiling point: 2072 ℃

2. Specifications:

Chemical purity:

High purity indium: In-05 has a purity of over 99.999%, and the total impurity content of silver, aluminum, arsenic, cadmium, copper, iron, magnesium, nickel, lead, sulfur, silicon, tin, thallium, and zinc is less than 10ppm;

Ultra pure indium: In-06 with a purity of over 99.9999%, with a total impurity content of less than 1ppm in cadmium, copper, iron, magnesium, lead, sulfur, silicon, and tin;

Ultra high purity indium: In-07 has a purity of over 99.9999%, and the total impurity content of silver, cadmium, copper, iron, magnesium, nickel, lead, and zinc is less than 0.1ppm;

3. Physical properties: rod, ingot, tablet, pellet, pill.

4. Purpose:

Mainly used for the preparation of III-V compound semiconductors, high-purity alloys, ultra-low temperature cooling, transistor bases, doping agents for germanium and silicon single crystals, indium sealing, ITO, nuclear radiation safety monitoring, electrical contact components, solder, etc.

5. Packaging: Polyester film packaging followed by plastic film vacuum packaging or polyethylene bottle vacuum packaging.