Copper selenide CAS NO.20405-64-5

Product Introduction：

Copper selenide

Molecular formula: Cu2Se

Technical connection: purification of copper and selenium (the processes used include: anode slime enrichment, electrolysis, Vacuum distillation, hydrogenation deoxidation, Zone melting...) - vacuum melting to synthesize binary alloy.

Inspection: ICP-MS; XRD; Laser particle size analyzer.

Service: Provide practical protective measures and material application solutions.

Overview

Copper selenide

Molecular formula: Cu2Se

Technical connection: purification of copper and selenium (the processes used include: anode slime enrichment, electrolysis, Vacuum distillation, hydrogenation deoxidation, Zone melting...) - vacuum melting to synthesize binary alloy.

Inspection: ICP-MS; XRD; Laser particle size analyzer.

Service: Provide practical protective measures and material application solutions.

(Especially for the preparation of copper indium gallium selenium CIGS thin films by sputtering and printing processes)

Can provide technical docking

Property: Black cubic crystal. Relative density 6.749. Melting point 1113 ℃.. It is obtained by heating a stoichiometric mixture of copper and selenium in a vacuum quartz sealed tube or by reducing the ammonia solution of copper salt and Selenous acid with hydrazine hydrate. Used as a semiconductor.

Technical Parameter

2. Specification:

Chemical purity:

High purity Copper selenide -05 purity is more than 99.999%, and the total content of silver, aluminum, arsenic, gold, cadmium, chromium, copper, iron, magnesium, manganese, nickel, lead, tin, and zinc impurities is less than 10ppm;

Ultra pure Copper selenide -06 has a purity of more than 99.9999%, and the total content of silver, aluminum, arsenic, gold, cadmium, chromium, copper, iron, magnesium, nickel, lead and zinc impurities is less than 1 ppm.

3. Physical properties: ingot, powder, pill, granule, needle like, etc.

4. Purpose:

It is mainly used to prepare group compound semiconductor, Copper selenide target, copper indium gallium selenium thin film solar cell.

5. Packaging: Polyester film packaging followed by plastic film vacuum packaging

Product Introduction：

Copper selenide

Molecular formula: Cu2Se

Technical connection: purification of copper and selenium (the processes used include: anode slime enrichment, electrolysis, Vacuum distillation, hydrogenation deoxidation, Zone melting...) - vacuum melting to synthesize binary alloy.

Inspection: ICP-MS; XRD; Laser particle size analyzer.

Service: Provide practical protective measures and material application solutions.

Overview

Copper selenide

Molecular formula: Cu2Se

Technical connection: purification of copper and selenium (the processes used include: anode slime enrichment, electrolysis, Vacuum distillation, hydrogenation deoxidation, Zone melting...) - vacuum melting to synthesize binary alloy.

Inspection: ICP-MS; XRD; Laser particle size analyzer.

Service: Provide practical protective measures and material application solutions.

(Especially for the preparation of copper indium gallium selenium CIGS thin films by sputtering and printing processes)

Can provide technical docking

Property: Black cubic crystal. Relative density 6.749. Melting point 1113 ℃.. It is obtained by heating a stoichiometric mixture of copper and selenium in a vacuum quartz sealed tube or by reducing the ammonia solution of copper salt and Selenous acid with hydrazine hydrate. Used as a semiconductor.

Technical Parameter

2. Specification:

Chemical purity:

High purity Copper selenide -05 purity is more than 99.999%, and the total content of silver, aluminum, arsenic, gold, cadmium, chromium, copper, iron, magnesium, manganese, nickel, lead, tin, and zinc impurities is less than 10ppm;

Ultra pure Copper selenide -06 has a purity of more than 99.9999%, and the total content of silver, aluminum, arsenic, gold, cadmium, chromium, copper, iron, magnesium, nickel, lead and zinc impurities is less than 1 ppm.

3. Physical properties: ingot, powder, pill, granule, needle like, etc.

4. Purpose:

It is mainly used to prepare group compound semiconductor, Copper selenide target, copper indium gallium selenium thin film solar cell.

5. Packaging: Polyester film packaging followed by plastic film vacuum packaging